4DS Technology


4DS Technology

4DS is pioneering Interface Switching ReRAM, a unique area-based ReRAM technology best positioned for Storage Class Memory in mobile devices and cloud data centers.

The 4DS Interface Switching ReRAM technology already satisfies the essential Storage Class Memory requirements:


The 4 Most Significant Leaps Forward

In addition to many important milestones, the 4 steps that represent the most significant leaps forward for 4DS are:

• In mid 2014, 4DS entered into a joint development agreement with HGST – renewed in mid 2015, 2016, 2017, 2018, 2019, 2020, 2021, 2022 & 2023 – which enabled the production of cells, essential for high-density and cost-effective memories. This collaboration continues to provide valuable insight in what is really important for future electronic systems.

• In mid 2017, 4DS pioneered an industry first for any ReRAM: a read speed comparable to DRAM without the need for speed-crippling error correction.

• In late 2017, entered into a collaboration agreement with imec to develop a production-compatible process and to demonstrate that the 4DS technology is a viable candidate for Storage Class Memory by developing a megabit memory test chip. This agreement was recently renewed until end 2024.

• In August 2023 4DS showed, for the first time, a fully functioning megabit array with 60nm memory cells, access transistors and write circuitry. Within the fully functioning megabit array 4DS testing confirmed: Read and write speeds at 27 nanoseconds; Endurance well in excess of 2 billion cycles; and Retention which is persistent and tuneable.

• On 18 September 2023, the Company informed shareholders that it had successfully completed further analysis of the Fourth Platform Lot and the results obtained were significantly better as compared to results announced on 23 August 2023. The Company confirmed that following additional testing within the megabit array, 4DS had: Write speeds at 9.5 nanoseconds which were significantly superior to DRAM; Endurance in excess of 3 billion cycles; DRAM read speed; and Retention is persistent and tuneable. 4DS’ ReRAM performance profile to suitably meet these outcomes had again been clearly demonstrated on the Fourth Platform Lot via the additional testing.