4DS Memory Limited (ASX: 4DS), with facilities located in Silicon Valley, is a semiconductor technology company bringing high bandwidth, high endurance, persistent non-volatile memory to advanced CMOS process nodes.
Its technology, known as Interface Switching ReRAM, features tunable persistence and low energy per bit for today’s most challenging compute intensive and AI processor applications. Established in 2007, 4DS owns a patented IP portfolio, comprising 34 USA patents, and is the first company to develop Area based ReRAM on an advanced CMOS processing node.
4DS has three important industry relationships: a development agreement with Belgium based imec, a world leading research and innovation hub in nano electronics and digital technologies; a design agreement with Infineon Technologies AG, Germany’s largest semiconductor manufacturer and one of the ten largest semiconductor manufacturers worldwide; and a joint development agreement with Western Digital subsidiary HGST, a global leader in storage solutions.
4DS Roadmap
Key Highlights
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2025
- Capital raise for $8.6M completed
- Initiation of the Memory Test Chip design and verification work with Infineon Technologies, imec and a major Taiwanese foundry
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2024
- 4DS achieves new write speed milestone of 4.7ns
- Peter Himes appointed to Chief Strategic Officer
- HGST renews for 11th consecutive year
- Successfully completed Fifth Platform Lot verifying process tuning to enable 20nm node requirements
- Entered into a Design Agreement with Infineon Technologies to develop, in partnership with imec and a major Taiwanese foundry, a custom ReRAM Memory Test Chip based on 4DS’ Area Based ReRAM technology
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2023
- Renewed technical progress update
- Granted 34th USA Patent
- Placement for $5.5M completed
- HGST renews for 10th consecutive year
- imec shipment of Fourth Platform Lot
- Megabit success with the Fourth Platform Lot showing a fully functioning megabit array with 60nm memory cells, access transistors and write circuitry
- imec contract extension for 2024
- Appointment of strategic advisor Peter Himes
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2022
- HGST renews for 9th consecutive year
- Company update re Third Platform Lot, Management changes and strategic review of results
- Extension of imec collaboration for 2023
- Granted 33rd USA Patent
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2021
- Positive results from Non-Platform Lot
- Commence production of Platform Lot at imec
- Granted 30th USA Patent
- Admitted to the S&P/ASX All Technology Index
- Granted 31st and 32nd USA Patent
- Technical Update
- Renewed imec agreement for 2022
- $AUD 6 million raised from Placement and Share Purchase Plan
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2020
- Progresses to imec platform
- Extends imec collaboration
- Granted 23rd 24th 25th 26th 27th 28th and 29th USA patents
- HGST renew for 7th consecutive year
- Most successful data to date
- Raises A$7.6 million
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2019
- Achieved significant endurance and retention characteristics with imec
- JDA with HGST renewed for 6th consecutive year
- Additional significant achievements with imec for a second time
- Completes A$3.25 million Placement and A$0.75 million SPP
- Granted 21st and 22nd USA patents
- 4DS progresses to imec’s memory megabit platform
- Extends collaboration with imec to 2020
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2018
- Investor briefings with Jim Dorrian
- JDA with HGST renewed in May 2018
- Granted 20th USA patent
- USA Marketing Roadshow
- Completes A$3.15 million Placement
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2017
- Achieved DRAM-like write speeds
- JDA with HGST renewed in July 2017
- Entered into a collaboration agreement with imec
- A$3.45 million raised
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2016
- First demonstration of feasibility of a 40nm cell
- JDA with HGST renewed in July 2016
- Successfully met the endurance milestone as defined under the 2015 prospectus
- A$4.0 million raised
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2015
- Public Offer closes oversubscribed
- Developed functional cells smaller than 250nm with high yield and lot-to-lot consistency
- JDA with HGST renewed in July 2015
- A$2.75 million raised
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2014
- Joint Development Agreement signed with HGST, a Western Digital subsidiary, for work on scaling the 4DS technology to industry competitive geometries
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2007 – 2013
- ReRAM technology building blocks in place.
- Proof of concept in affordable geometries – basic memory cell works well.
- Patented Interface Switching ReRAM memory cell based on oxygen vacancies
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