The 4DS Advantages

Memory at
DRAM Speeds

4.7ns write times – no refresh needed due to inherent retention

Single Shot

Tunable Data Retention

Highest energy
optimization for warm
data applications

Can trade off long
retention for reduced

Low Energy
per Bit

For Warm Data and Persistent Memory Applications

Scalable to Any
Process Node

Simple fab
processing, compatible with standard tools

Low-cost BEOL Integration, compatible to any advanced CMOS logic process


By time or voltage modulation

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